The NODE project focuses on an innovative bottom-up
approach to fabrication and integration of nanoelectronic devices,
based on self-assembling semiconductor nanowires. The primary target
is to deliver replacement and
add-on technologies to silicon CMOS, such as FET devices for logics
and III-V bipolar transistors for RF applications. NODE will study
key device families based on semiconductor nanowires, assess their
compatibility with conventional semiconductor processing, and evaluate
novel architectural concepts and their implementation scenarios.
It is the overall objective of the NODE Integrated Project to demonstrate
that nanowire-based device technology is the disruptive technology
needed for long-term innovation and growth in the electronics industry.
NODE hereby takes on the challenge as formulated in the IST Work
Programme: “breaking new barriers with current CMOS technology
below 10 nanometers as well as the exploration of alternative materials”.
The partners are leading academic groups in nanowire research
and semiconductor nanofabrication, research laboratories from
major European electronics industries (Philips, IBM and Qimonda),
an SME-company specialized in nanowire device technology (Qumat),
as well as a major European Si-technology research center (IMEC).
This coverage of the entire science–technology–application
chain among the partners ensures early access for the European
electronics industry to the knowledge generated within NODE,
and maximizes the likelihood of effective exploitation of its
results. By the end of the project, a selection of the most promising
nanowire technologies will have been made and the incorporation
of nanowire devices into Si-technology demonstrated. It is further
expected that the knowledge gained will support other European
science & technology efforts, e.g. in quantum information
technology, opto-electronics, photo-voltaics, and general lighting,
as well as in nanomechanics (NEMS), sensors and bio-medical applications.
Node Webpage: http://www.node-project.com/ |
