 |
|
||||
|
|||||
|
|||||
|
|
|
||||||||||||||
|
|||||||||||||||
|
Nanowire publications
|
|||||||||||||||||||||||||||||||
|
|
|
||
2007 J. Knoch, W. Riess and J. Appenzeller, "Outperforming the conventional scaling rules in the quantum capacitance limit," submitted to IEEE Electron Dev. Lett., 2007. H. Schmid, M. T. Björk, J. Knoch, H. Riel, P. Rice, T. Topuria, and W. Riess, "Patterned Epitaxial Vapor-Liquid-Solid Growth of Silicon Nanowires on Si(111) using Silane," accepted J. Appl. Phys (2007). J. Knoch, S. Mantl and J. Appenzeller, "Impact of the dimensionality on the performance of tunneling FETs: bulk versus one-dimensional devices," Solid-State Electron., 51, 572 (2007). J. Knoch and J. Appenzeller, "Tunneling phenomena in carbon nanotube field-effect transistors," to appear in physica status solidi a, 2007. J. Knoch, M. Zhang, J. Appenzeller and S. Mantl, "Physics of ultrathin-body silicon-on-insulator Schottky barrier field-effect transistors," Appl. Phys. A, 87, 351 (2007). T. Kraus, L. Malaquin, H. Schmid, W. Riess, N. D. Spencer and H. Wolf, "Nanoparticle printing with single-particle resolution," Nature Nanotechnology 2, 570 - 576 (02 Sept 2007). M.T. Björk, O. Hayden, H. Schmid, H. Riel and W. Riess, "Vertical Surround-Gated Silicon Nanowire Impact Ionization Field-Effect Transistors," Appl. Phys. Lett. 90, 142110 (2007). O. Hayden, M. T. Björk, H. Schmid, H. Riel, U. Drechsler, S.F. Karg, E. Lörtscher and W. Riess, "Fully-Depleted Nanowire Field Effect Transistor in Inversion Mode," Small 3, 230 (2007). A. I. Persson, L. E. Fröberg, S. Jeppesen, M. T. Björk and L. Samuelson, "Surface diffusion effects on growth of nanowires in CBE," J. Appl. Phys. 101, 034313 (2007). A. Gustafsson, M. T. Björk and L. Samuelson, "Locating Nanowire Heterostructures by Electron Beam Induced Current," Nanotechnology 18, 205306 (2007). D. Suyatin, C. Thelander, M. T. Björk and L. Samuelson, "Sulphur passivation for ohmic contact formation to InAs nanowires," Nanotechnology 18, 105307 (2007). |
||||
2006 |
 |
|||
|
J. Appenzeller, J. Knoch, E. Tutuc, M. Reuter and S. Guha, "Dual-gate silicon nanowire transistors with nickel silicide contacts," Electron Devices Meeting, 2006. IEDM '06. International, Publication Date: 11-13 Dec. 2006, 1-4 ISBN: 1-4244-0439-8, INSPEC Accession Number: 9485648, Posted online: 2007-04-16 10:35:10.0. C. Thelander, P. Agarwal, S. Brongersma, J. Eymery, L. F. Feiner, A. Forchel, M. Scheffler, W. Riess, B. J. Ohlsson, U. Gösele, and L. Samuelson, "Nanowire-based One-dimensional Electronics," Materials Today, Oct. 2006, Vol. 9, No. 10. V. Schmidt, H. Riel, S. Senz, S. Karg, W. Riess and U. Gösele, "Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor," Small 2(1) (January 2006) 85-88 (published online: 7 Nov 2005). Z. Zanolli, L. E. Fröberg, M. T. Björk, M.-E. Pistol and L. Samuelson, "Fabrication, optical characterization and modeling of strained core-shell nanowires," Thin Solid Films 515, 793 (2006). A. I. Persson, M. T. Björk, S. Jeppesen, J. B. Wagner, L. R. Wallenberg and L. Samuelson, "InAs(1-x)P(x) nanowires for device engineering," Nano Lett. 6, 403 (2006). |
||||
|
||||
|
