Publications

[1] K. E. Moselund, M. T. Björk, H. Schmid, H. Ghoneim, S. Karg, E. Lörtscher, W. Riess and H. Riel,
"Silicon nanowire tunnel FETs: Low-temperature operation and influence of high-k gate dielectric,"
IEEE Transactions on Electron Devices, accepted, 2011.

[2] C. D. Bessire, M. T. Björk, H. Schmid, A. Schenk, K. B. Reuter, and H. Riel,
"Trap-Assisted Tunneling in Si-InAs Nanowire Heterojunction Tunnel Diodes," online.

[3] H. Schmid, K. E. Moselund, M. T. Björk, M. Richter, H. Ghoneim, C. D. Bessire and H. Riel,
"Fabrication of Vertical InAs-Si Heterojunction Tunnel Field Effect Transistors,"
69th Device Research Conference Digest, 2011.

[4] P. Mensch, K. E. Moselund, S. Karg, E. Lörtscher, M. T. Björk, H. Schmid and H. Riel,
"C-V Measurements of Single Vertical Nanowire Capacitors,"
69th Device Research Conference Digest, 2011.

[5] M.E. Reimer, M. P. van Kouwen, M. Barkelid, M. Hocevar, M. H. M. van Weert, R. E. Algra, E. P. A. M. Bakkers, M. T. Björk, H. Schmid, H. Riel, L. P. Kouwenhoven, V. Zwiller,
"Single photon emission and detection at the nanoscale utilizing semiconductor nanowires,"
Journal of Nanophotonics, accepted, 2011.

[1] M.I. den Hertog, H. Schmid, D. Cooper, J. Rouviere, M.T. Björk, H. Riel, P. Rivallin, S. Karg and W. Riess,
"Mapping Active Dopants in Single Silicon Nanowires Using Off-Axis Electron Holography,"
Nano Letters 9(11), 3837-3843 (2010).

[2] K. Moselund, H. Ghoneim, H. Schmid, M.T. Bjoerk, E. Loertscher, S. Karg, G. Signorello, D. Webb, M. Tschudy, R. Beyeler, H. Riel,
"Solid-State Diffusion as an Efficient Doping Method for Silicon Nanowires and Nanowire Field Effect Transistors,"
Nanotechnology 21(43), 435202 (October 2010).

[3] M. T. Björk, H. Schmid, C. D. Bessire, K. E. Moselund, H. Ghoneim, S. Karg, E. Lörtscher, and H. Riel,
"Si–InAs Heterojunction Esaki Tunnel Diodes with High Current Densities,"
Appl. Phys. Lett. 97, 163501 (2010).

[1] K. Moselund, H. Ghoneim, M. Bjoerk, H. Schmid, S. Karg, E. Loertscher, W. Riess, H. Riel,
"VLS-Grown Silicon Nanowire Tunnel FET,"
Proc. 67th Device Research Conference "DRC," Penn State University, PA (IEEE).

[2] K. Moselund, H. Ghoneim, M. Bjoerk, H. Schmid, S. Karg, E. Loertscher, W. Riess, H. Riel,
"Comparison of VLS Grown Si NW Tunnel FETs with Different Gate Stacks,"
Proc. 39th European Solid-State Device Research Conf. "ESSDERC 2009," Athens, Greece, Session C6L-B, paper 3082 (IEEE, September 2009).

[3] W. Riess, K. Boucart, A.M. Ionescu,
"Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs,"
IEEE Electron. Dev. Lett. 30(6), 656-658 (2009).

[4] H. Ghoneim, J. Knoch, H. Riel, D. Webb, M. T. Björk, S. Karg, E. Lörtscher, H. Schmid, and W. Riess,
"Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors, "
Appl. Phys. Lett. 95, 213504 (2009).

[5] H. Schmid, M.T. Björk, J. Knoch, S. Karg, H. Riel, and W. Riess,
"Doping Llimits of Grown in-situ Doped Silicon Nanowires Using Phosphine,"
Nano Lett. 9, 173 (2009).

[6] M.T. Björk, H. Schmid, J. Knoch, H. Riel, and W. Riess,
"Donor Deactivation in Silicon Nanostructures,"
Nature Nanotechnology 4, 103 (2009).

[1] H. Schmid, M. T. Björk, J. Knoch, H. Riel, P. Rice, T. Topuria and W. Riess,
"Patterned Epitaxial VLS Growth of SiNWs on Si(111) Using Silane,"
J. Appl. Phys. 103, 024304 (2008).

[2] M. T. Björk, J. Knoch, H. Schmid, H. Riel, and W. Riess,
"SiNW Tunneling Field Effect Transistors,"
Appl. Phys. Lett. 92, 193504 (2008).

[3] Ania C. Bleszynski-Jayich, Linus E. Fröberg, Mikael T. Björk, H. J. Trodahl, Lars Samuelson, and R. M. Westervelt,
"Imaging a One-Electron InAs Quantum Dot in an InAs/InP Nanowire,"
Phys. Rev. B 77, 245327 (2008).

[4] J. Knoch, M.T. Björk, H. Riel, H. Schmid and W. Riess,
"One-Dimensional Nanoelectronic Devices - Towards the Quantum Capacitance,"
DRC Technical Digest 2008.

[5] J. Appenzeller, J. Knoch, M.T. Björk, H. Schmid, H. Riel and W. Riess,
"Towards Nnanowire Electronics,"
IEEE Trans. Electron Dev. 55, 2827 (2008).

[1] J. Knoch, W. Riess and J. Appenzeller,
"Outperforming the Conventional Scaling Rules in the Quantum Capacitance Limit,"
IEEE Electron Dev. Lett. 29, 372 (2007).

[2] H. Schmid, M. T. Björk, J. Knoch, H. Riel, P. Rice, T. Topuria, and W. Riess,
"Patterned Epitaxial Vapor-Liquid-Solid Growth of Silicon Nanowires on Si(111) Using Silane,"
J. Appl. Phys 103, 024304 (2007).

[3] J. Knoch, S. Mantl and J. Appenzeller,
"Impact of the Dimensionality on the Performance of Tunneling FETs: Bulk versus One-Dimensional Devices,"
Solid-State Electron. 51, 572 (2007).

[4] J. Knoch and J. Appenzeller,
"Tunneling Phenomena in Carbon Nanotube Field-Effect Transistors,"
physica status solidi a, 205, 679 (2007).

[5] J. Knoch, M. Zhang, J. Appenzeller and S. Mantl,
"Physics of Ultrathin-Body Silicon-on-Insulator Schottky Barrier Field-Effect Transistors,"
Appl. Phys. A, 87, 351 (2007).

[6] T. Kraus, L. Malaquin, H. Schmid, W. Riess, N. D. Spencer and H. Wolf,
"Nanoparticle Printing with Single-Particle Resolution,"
Nature Nanotechnology 2, 570 (2007).

[7] M.T. Björk, O. Hayden, H. Schmid, H. Riel and W. Riess,
"Vertical Surround-Gated Silicon Nanowire Impact Ionization Field-Effect Transistors,"
Appl. Phys. Lett. 90, 142110 (2007).

[8] O. Hayden, M. T. Björk, H. Schmid, H. Riel, U. Drechsler, S.F. Karg, E. Lörtscher and W. Riess,
"Fully-Depleted Nanowire Field Effect Transistor in Inversion Mode,"
Small 3, 230 (2007).

[9] A. I. Persson, L. E. Fröberg, S. Jeppesen, M. T. Björk and L. Samuelson,
"Surface diffusion effects on growth of nanowires in CBE,"
J. Appl. Phys. 101, 034313 (2007).

[10] A. Gustafsson, M. T. Björk and L. Samuelson,
"Locating Nanowire Heterostructures by Electron Beam Induced Current,"
Nanotechnology 18, 205306 (2007).

[11] D. Suyatin, C. Thelander, M. T. Björk and L. Samuelson,
"Sulphur Passivation for Ohmic Contact Formation to InAs Nanowires," Nanotechnology 18, 105307 (2007).

[1] J. Appenzeller, J.  Knoch,  E. Tutuc, M. Reuter and S. Guha,
"Dual-Gate Silicon Nanowire Transistors with Nickel Silicide Contacts,"
Electron Devices Meeting, 2006. IEDM '06. International, Publication Date: 11-13 Dec. 2006, 1-4 ISBN: 1-4244-0439-8, INSPEC Accession Number: 9485648, Posted online: 2007-04-16 10:35:10.0.

[2] C. Thelander, P. Agarwal, S. Brongersma, J. Eymery, L. F. Feiner, A. Forchel, M. Scheffler, W. Riess, B. J. Ohlsson, U. Gösele, and L. Samuelson,
"Nanowire-Based One-Dimensional Electronics,"
Materials Today, Oct. 2006, Vol. 9, No. 10.

[3] V. Schmidt, H. Riel, S. Senz, S. Karg, W. Riess and U. Gösele,
"Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor,"
Small 2(1) (January 2006) 85-88 (published online: 7 Nov 2005).

[4] Z. Zanolli, L. E. Fröberg, M. T. Björk, M.-E. Pistol and L. Samuelson,
"Fabrication, Optical Characterization and Modeling of Strained Core-Shell Nanowires,"
Thin Solid Films 515, 793 (2006).

[5] A. I. Persson, M. T. Björk, S. Jeppesen, J. B. Wagner, L. R. Wallenberg and L. Samuelson,
"InAs_1-xP_x Nanowires for Device Engineering,"
Nano Lett. 6, 403 (2006).