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Time-resolved measurements of spin transport performed on metal/oxide/semiconductor
planar structures reveal that the Kerr rotation, arising from the
polarized electrons injected in the depletion layer of the semiconductor,
is modulated by the distance of these electrons to the metal-semiconductor
interface. The time-resolved Kerr signal exhibits fast oscillations,
in the range of a few up to ca. 100 ps. These oscillations originate,
in a Fabry-Perot interferometer manner, from the interference between
the light reflected from the metalized semiconductor surface and
from the front of the electron distribution photoexcited by the
pump light pulse. This effect allows one to study in a direct manner
the dynamics of photogenerated charge carriers in the depletion
layer of the biased Schottky barrier.
| Principle of the experiment |
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