Our ongoing ac­t­i­vi­ties range from multi-junc­tion solar-cell, plas­mon­ic and pho­ton­ic nano­las­ers to op­ti­cal de­tec­tors.

—IBM scientist Kirsten Moselund

In the nanophotonic projects, we are interested in exploring scaled III–V active components monolithically integrated on silicon as emitters and detectors for applications in communication and IoT. The focus here is on seamless integration on silicon and with silicon electronic and passive photonic components as well as on exploiting a broad III–V materials base.

We are exploiting template-assisted selective epitaxy, which was invented at IBM [1,2]. This approach starts nucleation from a tiny seed and allows us to integrate a large number of non-lattice matched materials on any crystalline orientation of silicon even amorphous Si. This technique is most ideally suited for photonic applications that require millimeter-scaled features, and that may benefit from the flexibility in materials choice and growth sequence as well as from the high level of integration this it affords.

SEM image of a TASE template
(A) SEM image of a TASE template for the direct growth of a ring cavity.
(B) SEM image of a ring grown by the virtual substrate approach.


[1] H. Schmid, M. Borg, K. Moselund, L. Gignac, C.M. Breslin, J. Bruley, D. Cutaia, H. Riel,
Template-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si,”
Applied Physics Letters 106, 233101, 2015.

[2] “IBM Scientists Present III-V Epitaxy and Integration to Go Below 14nm,” IBM Research blog, June 18, 2015.

Ask the experts

Kirsten E. Moselund

Kirsten E. Moselund

IBM Research scientist

Lukas Czornomaz

IBM Research scientist

Heinz Schmid

IBM Research scientist

Svenja Mauthe

Svenja Mauthe

IBM Research scientist

 


EU projects

SiLAS

SiLAS
Towards a SiGe nanolaser.
A Horizon 2020 FET Open project 2017-2020.


Nanophotonics PLASMIC

PLASMIC
Plasmonically-enhanced III–V nanowire lasers on silicon for integrated communications.
H2020 ERC Starting Grant project under Grant Agreement Number 678567.


Modes

MODES
Monolithic Optoelectronic DEvices on Silicon
An EU Horizon 2020 Marie Skłodowska-Curie Individual Fellowship.