III–V integration & devices

“Ballistic one-dimensional InAs nanowire cross-junction interconnects,”
J. Gooth et al.,
Nano Lett. 17(4) 2596-2602 (2017).

Ballistic 1D quantum transport is maintained across several junctions in series and 1D modes can be distributed into multiple nanowire branches.

“Ballistic one-dimensional transport in InAs nanowires integrated on silicon,”
J. Gooth et al.,
Appl. Phys. Lett. 110, 083105 (2017).

1D ballistic transport with conductance quantization in units of 2e²/h is demonstrated and the sub-band structure of the nanowires is investigated using bias spectroscopy. A mean free path of 470 nm is determined.

“Ballistic transport and high thermopower in one-dimensional InAs nanowires,”
S. Karg et al.,
Solid-State Device Research Conference “ESSDERC” (2016).

Experimental investigation of enhanced thermoelectric power factor in one-dimensional InAs nanowires.

“Temperature mapping of operating nanoscale devices by scanning probe thermometry,”
F. Menges et al.,
Nature Communications 7 (2016).

Imaging temperature fields at the nanoscale is a central challenge in various areas of science and technology. Nanoscopic hotspots, such as those observed in integrated circuits or plasmonic nanostructures, can be used to modify the local properties of matter, govern physical processes, activate chemical reactions and trigger biological mechanisms in living organisms.

“Electrical and thermoelectrical properties of gated InAs nanowires,”
P. Mensch et al.,
Solid-State Device Research Conference “ESSDERC” (2013).

Measurements of electrical conductivity and Seebeck coefficient are reported varying the carrier concentration through application of a gate voltage. The temperature dependence of the electron mobility is examined.

“Using the Seebeck coefficient to determine charge carrier concentration, mobility, and relaxation time in InAs nanowires,”
V. Schmidt et al.,
Applied Physics Letters 104, 012113 (2014).

Analysis and modelling of the thermoelectric properties of InAs nanowires infer charge carrier concentration, charge carrier mobility, and relaxation time.

“Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors,”
S.F. Karg et al.,
Nanotechnology 25(30), 305702 (2014).

Precise measurements of a complete set of thermoelectric parameters in a single indium-arsenide nanowire have been performed using highly sensitive, micro-fabricated sensing devices based on the heater/sensor principle.

“Measurement of thermoelectric properties of single semiconductor nanowires,”
S. Karg et al.,
J. Electron. Mater. 42(7) 2409-2414 (2013).

We evaluated a self-heating method to determine the thermal conductivity of individual silicon and indium arsenide (InAs) nanowires. Further, electrical conductivity and Seebeck coefficient (thermopower) were measured.