One-dimensional electron system & nanoscale thermoelectrics

Continued scaling, the introduction of non-planar CMOS transistors (FinFET, Gate-all-around FET, nanowire FET) and the changeover to high-mobility channel materials will ultimately lead to noticeable quantum size effects in device characteristics.

We are investigating the transition from three-dimensional (3D) to one-dimensional (1D) electronic transport in III–V semiconductor nanowires. Moreover, we aim to improve thermoelectric devices by exploiting the unique electronic and thermal properties of semiconducting nanowires.

We are focusing on advancing our fundamental understanding of thermoelectric on the nanoscale, developing test structures for the precise measurement of relevant parameters and fabricating nanowire-based device structures with enhanced performance.

 

One-dimensional quantum transport across multiple nanowire junctions

One-dimensional quantum transport across multiple nanowire junctions.

One-dimensional quantum transport across multiple nanowire junctions

MEMS platform for thermoelectric characterization of nanowires.

 

 

 

Highlights

1d_thermoelectrics

Ballistic one-dimensional InAs nanowire cross-junction interconnects,”
J. Gooth et al.,
Nano Lett. 17(4) 2596-2602 (2017).
[ More ]

Ballistic one-dimensional InAs nanowire cross-junction interconnects,”
J. Gooth et al.,
Nano Lett. 17(4) 2596-2602 (2017).

Ballistic 1D quantum transport is maintained across several junctions in series and 1D modes can be distributed into multiple nanowire branches.

1d_thermoelectrics

Ballistic one-dimensional transport in InAs nanowires integrated on silicon,”
J. Gooth et al.,
Appl. Phys. Lett. 110, 083105 (2017).
[ More ]

Ballistic one-dimensional transport in InAs nanowires integrated on silicon,”
J. Gooth et al.,
Appl. Phys. Lett. 110, 083105 (2017).

1D ballistic transport with conductance quantization in units of 2e2/h is demonstrated and the sub-band structure of the nanowires is investigated using bias spectroscopy. A mean free path of 470 nm is determined.

 

1d_thermoelectrics

Ballistic transport and high thermopower in one-dimensional InAs nanowires,”
S. Karg et al.,
Solid-State Device Research Conference “ESSDERC” (2016).
[ More ]

Ballistic transport and high thermopower in one-dimensional InAs nanowires,”
S. Karg et al.,
Solid-State Device Research Conference “ESSDERC” (2016).

Experimental investigation of enhanced thermoelectric power factor in one-dimensional InAs nanowires.

1d_thermoelectrics

Temperature mapping of operating nanoscale devices by scanning probe thermometry,”
F. Menges et al.,
Nature Communications 7 (2016).
[ More ]

Temperature mapping of operating nanoscale devices by scanning probe thermometry,”
F. Menges et al.,
Nature Communications 7 (2016).

Imaging temperature fields at the nanoscale is a central challenge in various areas of science and technology. Nanoscopic hotspots, such as those observed in integrated circuits or plasmonic nanostructures, can be used to modify the local properties of matter, govern physical processes, activate chemical reactions and trigger biological mechanisms in living organisms.

 

1d_thermoelectrics

Electrical and thermoelectrical properties of gated InAs nanowires,”
P. Mensch et al.,
Solid-State Device Research Conference “ESSDERC” (2013).
[ More ]

Electrical and thermoelectrical properties of gated InAs nanowires,”
P. Mensch et al.,
Solid-State Device Research Conference “ESSDERC” (2013).

Measurements of electrical conductivity and Seebeck coefficient are reported varying the carrier concentration through application of a gate voltage. The temperature dependence of the electron mobility is examined.

1d_thermoelectrics

Using the Seebeck coefficient to determine charge carrier concentration, mobility, and relaxation time in InAs nanowires,”
V. Schmidt et al.,
Applied Physics Letters 104, 012113 (2014).
[ More ]

Using the Seebeck coefficient to determine charge carrier concentration, mobility, and relaxation time in InAs nanowires,”
V. Schmidt et al.,
Applied Physics Letters 104, 012113 (2014).

Analysis and modelling of the thermoelectric properties of InAs nanowires infer charge carrier concentration, charge carrier mobility, and relaxation time.

 

1d_thermoelectrics

Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors,”
S.F. Karg et al.,
Nanotechnology 25(30), 305702 (2014).
[ More ]

Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors,”
S.F. Karg et al.,
Nanotechnology 25(30), 305702 (2014).

Precise measurements of a complete set of thermoelectric parameters in a single indium-arsenide nanowire have been performed using highly sensitive, micro-fabricated sensing devices based on the heater/sensor principle.

1d_thermoelectrics

Measurement of thermoelectric properties of single semiconductor nanowires,”
S. Karg et al.,
J. Electron. Mater. 42(7) 2409-2414 (2013).
[ More ]

Measurement of thermoelectric properties of single semiconductor nanowires,”
S. Karg et al.,
J. Electron. Mater. 42(7) 2409-2414 (2013).

We evaluated a self-heating method to determine the thermal conductivity of individual silicon and indium arsenide (InAs) nanowires. Further, electrical conductivity and Seebeck coefficient (thermopower) were measured.

Ask the experts

Siegfried Karg

Siegfried Karg
IBM Research scientist

Bernd Gotsmann

Bernd Gotsmann
IBM Research scientist

Elisabetta Corti Riel

Elisabetta Corti
PhD student

Heike Riel

Heike Riel
IBM Research scientist